Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Ordered or disordered
Patent
1998-02-25
2000-02-22
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Ordered or disordered
438512, H01L 2100
Patent
active
060279532
ABSTRACT:
An X-ray imaging array is described together with a method for its manufacture. The array is defined by a set of PN junctions in a silicon wafer that extend all the way through between the two surfaces of the wafer. The PN junctions are formed using neutron transmutation doping that is applied to P-type silicon through a mask, resulting in an array of N-type regions (that act as pixels) in a sea of P-type material. Through suitable placement of the biassing electrodes, a space charge region is formed that is narrower at the top surface, where X-rays enter the device, and wider at the lower surface. This ensures that most of the secondary electrons, generated by the X-ray as it passes through the wafer, get collected at the lower surface where they are passed to a charge readout circuit.
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Liao Chungpin
Wu Jen-chau
Ackerman Stephen B.
Bowers Charles
Hawranek Scott J.
Industrial Technology Research Institute
Saile George O.
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