Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-12-06
2005-12-06
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S459000, C257S460000, C257S465000, C257S466000, C438S048000, C438S089000, C438S098000
Reexamination Certificate
active
06972469
ABSTRACT:
A PIN diode includes a first p-area, an n-area, and in between an intermediate area on a first surface of a substrate, wherein a doping concentration of the intermediate area is lower than a doping concentration of the p-area and lower than a doping concentration of the n-area. Further, the PIN diode includes a first electrically conductive member, which is arranged on a side of the p-area, which faces away from the intermediate area, and a second electrically conductive member, which is arranged on a side of the n-area, which faces away from the intermediate area. The PIN diode is preferably separated from the substrate by an insulating layer, covered by a further insulating layer on the surface, which faces away from the substrate, and laterally surrounded by a trench filled with an insulating material, such that it is essentially fully insulated and encapsulated.
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Sridhar S., et al.; “Dielectrically Isolated Lateral High Voltage PIN Rectifiers for Power ICs”; Technical Digest, International San Francisco, CA; pps. 245-248, Dec. 1992.
Peichl Raimund
Seng Philipp
Infineon - Technologies AG
Kang Donghee
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