Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means
Patent
1973-08-21
1976-07-20
Wilbur, Maynard R.
Radiant energy
Ionic separation or analysis
Static field-type ion path-bending selecting means
250211J, 338 18, 357 15, 357 91, H01L 2714
Patent
active
039710572
ABSTRACT:
A lateral photodetector of improved sensitivity and method of making the e. The photodetector consists of semiconductive wafer, having a transparent layer of metal deposited on its front face to form a Schottky barrier. A negative bias is applied to the Schottky barrier to form a depletion region in the wafer. A low resistivity layer is formed on back of the wafer to which four signal electrodes are attached. Before forming the cell, the semiconductor wafer was exposed to nuclear radiation to increase the responsivity of the cell.
REFERENCES:
patent: 3207902 (1965-09-01), Sandborg
patent: 3502884 (1970-03-01), Perlman et al.
patent: 3548213 (1970-12-01), Owen et al.
patent: 3582654 (1968-10-01), Meuleman
patent: 3615929 (1971-10-01), Portnoy et al.
patent: 3667116 (1972-06-01), Felice
patent: 3700978 (1972-10-01), North et al.
patent: 3704376 (1972-11-01), Lehovec et al.
patent: 3761711 (1973-09-01), Hall
patent: 3775191 (1973-11-01), McQuhae
patent: 3792257 (1974-02-01), Gardner et al.
Connors William P.
Glaenzer Richard H.
Saum George A.
Wagner Robert G.
Beers R.
Buczinski S. C.
Sciascia R.
Sheinbein S.
The United States of America as represented by the Secretary of
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