Lateral phase change memory and method therefor

Details Lateral phase change memory and method therefor Lateral phase change memory and method therefor

2008-04-15

2008-04-15

Ho, Tu-Tu V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S042000, C257SE45002, C438S102000, C438S666000, C438S668000, C438S671000

Reexamination Certificate

active

11499941

ABSTRACT:
Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to form two electrodes from the conductor material, wherein the two electrodes are separated by a sub-lithographic distance. The method may further include forming a phase change material between the two electrodes.

REFERENCES:
patent: 5650345 (1997-07-01), Ogura et al.
patent: 7119355 (2006-10-01), Wicker
patent: 2001/0021577 (2001-09-01), Brown et al.
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 2003/0137869 (2003-07-01), Kozicki

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