Lateral phase change memory and method therefor

Details Lateral phase change memory and method therefor Lateral phase change memory and method therefor

2006-10-10

2006-10-10

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S042000, C257SE45002, C438S102000

Reexamination Certificate

active

07119355

ABSTRACT:
Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to form two electrodes from the conductor material, wherein the two electrodes are separated by a sub-lithographic distance. The method may further include forming a phase change material between the two electrodes.

REFERENCES:
patent: 4845533 (1989-07-01), Pryor et al.
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 2002/0187648 (2002-12-01), Wu et al.

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