Lateral phase change memory and method therefor

Details Lateral phase change memory and method therefor Lateral phase change memory and method therefor

2005-03-15

2005-03-15

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S246000, C257S537000

Reexamination Certificate

active

06867425

ABSTRACT:
Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to form two electrodes from the conductor material, wherein the two electrodes are separated by a sub-lithographic distance. The method may further include forming a phase change material between the two electrodes.

REFERENCES:
patent: 6613604 (2003-09-01), Maimon et al.
patent: 20030075778 (2003-04-01), Klersy
patent: 20030219924 (2003-11-01), Bez et al.

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