Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-04-06
2010-10-19
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S005000, C257S042000, C257SE45002, C438S102000
Reexamination Certificate
active
07816660
ABSTRACT:
A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.
REFERENCES:
patent: 3619732 (1971-11-01), Neale
patent: 4115872 (1978-09-01), Bluhm
patent: 4203123 (1980-05-01), Shanks
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 6773967 (2004-08-01), Liu
patent: 2003/0116794 (2003-06-01), Lowrey
patent: 2004/0113181 (2004-06-01), Wicker
patent: 2004/0113232 (2004-06-01), Johnson et al.
patent: 2004/0165422 (2004-08-01), Hideki et al.
patent: 1 339 110 (2003-08-01), None
patent: WO 00/57498 (2000-09-01), None
Dodge Richard
Wicker Guy
Iannucci Robert
Jorgenson Lisa K.
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
Thomas Toniae M
LandOfFree
Lateral phase change memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lateral phase change memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral phase change memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4191597