Lateral phase change memory

Details Lateral phase change memory Lateral phase change memory

2006-04-06

2010-10-19

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S005000, C257S042000, C257SE45002, C438S102000

Reexamination Certificate

active

07816660

ABSTRACT:
A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.

REFERENCES:
patent: 3619732 (1971-11-01), Neale
patent: 4115872 (1978-09-01), Bluhm
patent: 4203123 (1980-05-01), Shanks
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 6773967 (2004-08-01), Liu
patent: 2003/0116794 (2003-06-01), Lowrey
patent: 2004/0113181 (2004-06-01), Wicker
patent: 2004/0113232 (2004-06-01), Johnson et al.
patent: 2004/0165422 (2004-08-01), Hideki et al.
patent: 1 339 110 (2003-08-01), None
patent: WO 00/57498 (2000-09-01), None

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