Lateral phase change memory

Details Lateral phase change memory Lateral phase change memory

2008-07-08

2008-07-08

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C365S105000

Reexamination Certificate

active

07397061

ABSTRACT:
A lateral phase change cell may be formed over a semiconductor substrate. The lateral cell, in some embodiments, may be exposed to light so that the same cell may be addressed by both optical and electrical signals.

REFERENCES:
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 6867425 (2005-03-01), Wicker
“industrial glass.” Encyclopædia Britannica. 2008. Encyclopædia Britannica Online. Jan. 28, 2008, <http://www.britannica.com/eb/article-76300>.

Affiliated with

Also associated with

Rating

Lateral phase change memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral phase change memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral phase change memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2769990