Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-06-05
2010-10-26
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S517000
Reexamination Certificate
active
07821097
ABSTRACT:
A lateral passive device is disclosed including a dual annular electrode. The annular electrodes form an anode and a cathode. The annular electrodes allow anode and cathode series resistances to be optimized to the lowest values at a fixed device area. In addition, the parasitic capacitance to a bottom plate (substrate) is greatly reduced. In one embodiment, a device includes a first annular electrode surrounding a second annular electrode formed on a substrate, and the second annular electrode surrounds an insulator region. A related method is also disclosed.
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Collins David S.
Johnson Jeffrey B.
Liu Xuefeng
Orner Bradley A.
Rassel Robert M.
Canale Anthony
Hoffman Warnick LLC
International Business Machines - Corporation
Nadav Ori
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