Lateral P-I-N photodetector

Details Lateral P-I-N photodetector Lateral P-I-N photodetector

1986-07-23

1988-05-24

Ozaki, George T.

Fishing, trapping, and vermin destroying

437133, 437160, H01L 21225, H01L 21285

Patent

active

047466200

ABSTRACT:
A lateral p-i-n photodetector and a method of forming a lateral p-i-n photodetector in which p- and n-type regions are formed on a semi-insulator or i-type body by allowing metal and p-dopant compounds and metal and n-dopant compounds onto the i-type body. During alloying, p- and n-type regions are formed in the i-type body by diffusion of the dopants from the compounds, leaving the metallic compounds as n- and p-type contacts over respective p- and n-regions. In preferred embodiments, the i-material is either Fe doped InP or InGaAs.

REFERENCES:
patent: 3549960 (1970-12-01), Wedlock
patent: 4376285 (1983-03-01), Leonberger et al.
patent: 4490709 (1984-12-01), Hammond et al.
Ghandi, VLSI Fabrication Principles Silicon and Gallium Arsenide, John Wiley, New York, 1983.
Matsushima, "Zn-Diffused In.sub.0.53 Ga.sub.0.47 As/InP Avalanche Photodetector", Appl. Phys. Lett. 36(6), 9/79.
Forrest et al., "Low Dark-Current, High-Efficiency Planar In.sub.0.53 Ga.sub.0.47 As/InP P-I-N Photodiodes", IEEE Electron Device Letters, EDL-2, (11), 11/81.

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