Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Reexamination Certificate
2005-05-24
2005-05-24
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
C257S576000, C257S581000
Reexamination Certificate
active
06897545
ABSTRACT:
The transistor includes an emitter region17disposed in a first isolating well11, 150formed in a semiconductor bulk. An extrinsic collector region16is disposed in a second isolating well3, 150formed in the semiconductor bulk SB and separated laterally from the first well by a bulk separator area20. An intrinsic collector region is situated in the bulk separator area20in contact with the extrinsic collector region. An intrinsic base region100is formed which is thinner laterally than vertically and in contact with the intrinsic collector region and in contact with the emitter region through bearing on a vertical flank of the first isolating well facing a vertical flank of the second isolating well. An extrinsic base region60is formed which is substantially perpendicular to the intrinsic base region in the top part of the bulk separator area, and contact terminals C, B, E respectively in contact with the extrinsic collector region, the extrinsic base region, and the emitter region.
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Preliminary Search Report dated Mar. 11, 2002 for French Application No. 0106141.
Jaouen Herve
Menut Olivier
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Gibbons Jon A.
Ha Nathan W.
Jorgenson Lisa K.
Pham Hoai
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