Lateral MOSFET with modified field plates and damage areas

Details Lateral MOSFET with modified field plates and damage areas Lateral MOSFET with modified field plates and damage areas

1996-07-29

1998-01-20

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

To compound semiconductor

257487, 257491, 257493, H01L 2358, H01L 31108

Patent

active

057104557

ABSTRACT:
A FET including a channel region and a drift region in a channel layer with a source in the channel region and a drain in the drift region. The current channel between the source and drain defining a straight transistor portion and a curved transistor portion. An oxide with a thin portion overlying the channel region and a thick portion overlying the drift region, and a gate on the thin oxide overlying the current channel. A drain field plate and a gate field plate on the thick oxide with spaced apart edges and a damaged region underlying the edges of the field plates only in the curved transistor portion to reduce electric fields at the edges of the field plates. Also, the current channel has a greater length and the edges are spaced apart farther in the curved transistor portions.

REFERENCES:
patent: 5569937 (1996-10-01), Bhatnager et al.

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