Lateral MOS controlled thyristor

Details Lateral MOS controlled thyristor Lateral MOS controlled thyristor

1990-02-28

1991-05-14

James, Andrew J.

357 39, H01L 2974, H01L 2978

Patent

active

050160761

ABSTRACT:
A lateral MOS-controlled thyristor (MCT) structure using a single MOS gate for both turn-on and turn off. By eliminating a parasitic lateral PNP transistor through the addition of a high resistivity region surrounding one output terminal, and adding a DMOS transistor to a conventional thyristor structure, the maximum turn-off current limit is increased with lower forward voltage drop than that available in prior art lateral MCTs.

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