Lateral junction field effect transistor device

Details Lateral junction field effect transistor device Lateral junction field effect transistor device

1981-12-28

1984-11-27

Edlow, Martin H.

357 53, 357 13, 357 23, H01L 2980, H01L 2978, H01L 2990, H01L 2940

Patent

active

044853920

ABSTRACT:
A lateral junction field effect transister device includes both a surface semiconductor layer located between the gate and drain contact regions of the device and a buried semiconductor layer which extends beneath at least the drain contact region and the surface semiconductor layer of the device. The buried layer may be in the form of a continuous layer extending beneath the gate, source, and drain contact regions of the device as well as the surface semiconductor layer, or it may be provided in annular form with an aperture beneath the source and gate regions. The annular central buried layer configuration may further include an additional buried layer portion extending beneath the source region of the device. Devices having buried and surface layers in accordance with the invention feature improved high-voltage breakdown characteristics, enhanced conductivity in the "on" state, and the ability to operate in the source-follower mode.

REFERENCES:
patent: 4066917 (1978-01-01), Compton et al.
patent: 4143392 (1979-03-01), Mylroie
patent: 4185291 (1980-01-01), Hirao et al.
patent: 4292642 (1981-09-01), Appels et al.
patent: 4300150 (1981-11-01), Colak
patent: 4314267 (1982-02-01), Bergeron et al.
patent: 4374389 (1983-02-01), Temple
patent: 4379726 (1983-04-01), Kumamaru et al.
IEDM"High Voltage Thin Layer Devices (Resurf Devices)" Appels et al. 1979, pp. 238-241.

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