Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2006-04-11
2008-09-02
Ngo, Ngan (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S272000, C257S285000, C257SE27069
Reexamination Certificate
active
07420232
ABSTRACT:
A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.
REFERENCES:
patent: 5264713 (1993-11-01), Palmour
patent: 2001/0030338 (2001-10-01), Noble
patent: 2003/0151101 (2003-08-01), Rumennik et al.
patent: 2003/0168704 (2003-09-01), Harada et al.
patent: 2004/0217419 (2004-11-01), Rumennik et al.
patent: 0 735 589 (1996-10-01), None
patent: 63131579 (1988-06-01), None
patent: 02005533 (1990-01-01), None
patent: 2001274414 (2001-10-01), None
T. Fujihara, “Theory of semiconductor superjunction devices”, Jpn. J. Appl. Phys. 36:6254-6262 (1997).
N. Kaminski et al., “Punch-through behaviour of wide bandgap materials (with example in 6H-SiC) and its benefit to JFETS”, Materials Science Forum (264-268):1073-1076 (1998).
Fujikawa Kazuhiro
Harada Shin
Hatsukawa Satoshi
Hirotsu Ken-ichi
Hoshino Takashi
Fish & Richardson P.C.
Ngo Ngan
Sumitomo Electric Industries Ltd.
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