Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2008-09-02
2008-09-02
Ngo, Ngan (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S272000, C257S285000, C257SE27069
Reexamination Certificate
active
11402701
ABSTRACT:
A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.
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Fujikawa Kazuhiro
Harada Shin
Hatsukawa Satoshi
Hirotsu Ken-ichi
Hoshino Takashi
Ngo Ngan
Sumitomo Electric Industries Ltd.
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