Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2006-04-04
2006-04-04
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S286000, C257S285000, C257S266000, C257S268000
Reexamination Certificate
active
07023033
ABSTRACT:
A lateral JFET has a basic structure including an n-type semiconductor layer (3) formed of an n-type impurity region and a p-type semiconductor layer formed of a p-type impurity region on the n-type semiconductor layer (3). Moreover, in the p-type semiconductor layer, there are provided a p+-type gate region layer (7) extending into the n-type semiconductor layer (3) and containing p-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3) and an n+-type drain region layer (9) spaced from the p+-type gate region layer (7) by a predetermined distance and containing n-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3). With this structure, the lateral JFET can be provided that has an ON resistance further decreased while maintaining a high breakdown voltage performance.
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Harada Shin
Hirotsu Ken-ichi
Kimoto Tsunenobu
Matsunami Hiroyuki
Fasse W. F.
Fasse W. G.
Jackson Jerome
Sumitomo Electric Industries Ltd.
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