Lateral insulated gate bipolar transistors with improved latch-u

Details Lateral insulated gate bipolar transistors with improved latch-u Lateral insulated gate bipolar transistors with improved latch-u

1985-11-29

1990-10-16

Hille, Rolf

357 38, 357 43, 357 22, 357 53, H01L 2974, H01L 2702, H01L 2980, H01L 2940

Patent

active

049639510

ABSTRACT:
The present invention relates generally to insulated gate transistors and more particularly, to laterally implemented insulated gate transistors having improved current capacity and improved immunity to latch-up. Specifically, it has been found that a lateral insulated gate transistor fabricated on a heavily doped substrate such as a p+ substrate exhibits improved current density. Further, the inclusion of an additional heavily doped region such as a P+ region proximate the base region contributes to improved latch-up immunity within the device.

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