Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2011-05-17
2011-05-17
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S517000, C257S525000, C257S557000, C257S575000, C257SE51004
Reexamination Certificate
active
07944022
ABSTRACT:
In a semiconductor device of the present invention, a first base region16is extended to a part under a gate electrode7while having a vertical concentration profile of an impurity that increases from the surface of a semiconductor layer3and becomes maximum under an emitter region5, and the length in the lateral direction from a point where the impurity concentration becomes maximum located under an end of the gate electrode7to the boundary with a second base region15is not smaller than the length in the vertical direction from the point where the impurity concentration becomes maximum to the boundary with the second base region15.
REFERENCES:
patent: 2006/0118902 (2006-06-01), Ikuta et al.
patent: 10-242456 (1998-09-01), None
patent: 2002-270844 (2002-09-01), None
Ikuta Teruhisa
Sato Yoshinobu
Panasonic Corporation
Steptoe & Johnson LLP
Tran Tan N
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