Lateral insulated gate bipolar transistor

Details Lateral insulated gate bipolar transistor Lateral insulated gate bipolar transistor

1997-12-12

1999-02-09

Chaudhurl, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257141, H01L 2974

Patent

active

058698507

ABSTRACT:
A lateral insulated gate bipolar transistor has an emitter region that is displaced from a main path for passing carriers from a collector region to a base region through a first semiconductor layer. This arrangement suppresses the operation of a parasitic transistor composed of the emitter region, base region, and first semiconductor layer and prevents a latch-up. The width of the gate electrode of covering the first semiconductor layer serving as a drift region of carriers may be widened to form a carrier accumulation layer in the first semiconductor layer adjacent to the gate electrode. The accumulation layer increases the total number of carriers in the drift region, to reduce a saturation voltage between the collector region and the emitter region. As a result, the lateral insulated gate bipolar transistor operates with a low voltage to reduce power consumption.

REFERENCES:
patent: 5126806 (1992-06-01), Sakurai et al.

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