Lateral insulated gate bipolar transistor

Details Lateral insulated gate bipolar transistor Lateral insulated gate bipolar transistor

1992-07-24

1994-08-30

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257139, 257143, 257144, H01L 2176, H01L 2738, H01L 21425

Patent

active

053430522

ABSTRACT:
A lateral insulated-gate bipolar transistor has a drift region having therein a base layer and a collector layer. An emitter layer is formed in the base layer. A gate electrode structure, comprising a control electrode and gate insulating layer, contacts the base layer, and also contacts the drift layer and the emitter layer. An emitter electrode contacts the emitter layer, and also the base layer, and a collector electrode contacts the collector layer. The emitter and collector electrodes are elongate and the ratio of their resistances per unit length is in the range of 0.5 to 2.0. This reduces the possibility of a localized high current density along the electrodes, thereby reducing the risk of latch-up due to parasitic thyristors. The collector and emitter electrodes may be of the same width and thickness, or of different widths and thicknesses, or may each have an auxiliary part (for example, in a multi-layer wiring arrangement), so that their resistances per unit length are in the desired range. A plurality of such transistors may be fabricated together in an array.

REFERENCES:
patent: 4717679 (1988-01-01), Baliga et al.
patent: 4933740 (1990-06-01), Baliga et al.
patent: 5100814 (1992-03-01), Yamaguchi et al.
Nonuniform and Latchup Current Detection in Lateral Conductivity Modulated FET's, K. O. Sin et al., 1990 IEEE.
W. T. Ng et al.: "P-Channel Schottky Injection Field Effect Transistors" Tech. Digest of the International Electron Devices Meeting, Dec. 1987.
J. Sin et al.: "Nonuniform and Latchup Current Detection in Lateral Conductivity Modulated FET's", IEEE Electron Device Letters, vol. 11, No. 6, Jun. 1990, pp. 250-252.

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