Lateral IGBT

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

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257140, 257350, H01L 2974, H01L 31111, H01L 2701

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active

057316031

ABSTRACT:
A sub-gate electrode is arranged to face, through a gate insulating film, a surface of a first p-type base layer which is interposed between a first n-type source layer and an n-type drift layer, and a surface of a second p-type base layer which is interposed between a second n-type source layer and the n-type drift layer and faces the first p-type base layer. A main gate electrode is arranged to face, through a gate insulating film, a surface of the second p-type base layer which is interposed between the second n-type source layer and the n-type drift layer and does not face the first p-type base layer. Three n-type MOSFETs are constructed such that one n-type channel is to be formed in the first p-type base layer and two n-type channels are to be formed in the second p-type base layer. The three channels are to be formed, so that the channel width is effectively enlarged and the current density is increased. The second p-type base layer has a length of 10 .mu.m or less in the drifting direction.

REFERENCES:
patent: 4823172 (1989-04-01), Mihara
patent: 5089864 (1992-02-01), Sakurai
Sumida et al., "Modified structure of the lateral IGBT on SOI ...", IEEE on electron devices Feb. 1995.
Patent Abstracts of Japan, vol. 014, No. 324, Jul. 11, 1990, JP-A 02 109371, Apr. 23,1990.
D.R. Disney, et al., Proceedings of the International Symposium on Power Semiconductor Devices, pp. 405-410, "A Trench-Gate Ligbt Structure and Two LMCT Structures in SOI Substrates".
1992 IEEE IEDM Technical Digest p. 229-232, "Prospects of High Voltage Power ICs on Thin SOI (Invited Paper)". Akio Nakagawa et al., Dec. 1992.
Proceedings of 1995 ISPSD p.141-145, "A Trench-Gate Injection Enhanced Lateral IEGT on SOI". Tomoko Matsudai et al., May 1995.

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