Coherent light generators – Particular component circuitry – Optical pumping
Patent
1988-06-17
1991-01-22
Mintel, William
Coherent light generators
Particular component circuitry
Optical pumping
357 4, 357 16, 357 17, 357 63, 357 19, 357 35, 372 45, 372 46, H01L 2972
Patent
active
049874683
ABSTRACT:
A lateral heterojunction bipolar transistor (LHBT) comprises emitter and/or collector regions forming a p-n heterojunctions at the emitter/base junction and at the collector/base junction with a planar base region wherein at least the emitter region is formed by employing impurity induced disordering (IID) to produce emitter or collector region of wider bandgap than the base region. The lateral heterojunction bipolar transistor of this invention can also double as a hetero transverse junction (HTJ) laser.
REFERENCES:
patent: 4511408 (1985-04-01), Holonyak, Jr.
patent: 4594603 (1986-06-01), Holonyak, Jr.
patent: 4620210 (1986-10-01), Scavennec et al.
patent: 4639275 (1987-01-01), Holonyak, Jr.
patent: 4644381 (1987-02-01), Shieh
patent: 4671830 (1987-06-01), Burnham
patent: 4672414 (1987-06-01), Gabriel et al.
patent: 4706255 (1987-11-01), Thornton et al.
patent: 4727403 (1988-02-01), Hida et al.
patent: 4727556 (1988-02-01), Burnham et al.
patent: 4727557 (1988-02-01), Burnham et al.
patent: 4728616 (1988-03-01), Ankri et al.
patent: 4731789 (1988-03-01), Thornton
patent: 4752934 (1988-06-01), Fukuzawa et al.
patent: 4801993 (1989-01-01), Ankri et al.
Herbert Kroemer, "Heterostructures for Everything: Device Principle of the 1980's?", Japanese Journal of Applied Physics, vol. 20, Supplement 20-1, pp. 9-13, 1981.
Robert L. Thornton et al., "Monolithic Integration of a Transparent Dielectric Waveguide into an Active Laser Cavity by Impurity Induced Disordering", Applied Physics Letters, vol. 51(24), pp. 1983-1985, Dec. 14, 1987.
"Lateral p-n-p Transistors", Section 2.17 on Diodes and Bipolar Transistors, pp. 62-68, Integrated Circuit Engineering-Design, Fabrication and Applications, Arthur B. Glaser et al. Addison Wesley Publishing Company, 1987.
Herbert Kroemer, "Heterostructure Bipolar Transistors and Integrated Circuits", Proceedings of the IEEE, vol. 70(1), pp. 13-25, Jan., 1982.
Herbert Kroemer, "Heterostructure Devices: A Device Physicist Looks at Interfaces", Surface Science, vol. 132, pp. 543-576, 1983.
Carothers W. Douglas
Mintel William
Small Jonathan A.
Xerox Corporation
LandOfFree
Lateral heterojunction bipolar transistor (LHBT) and suitability does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lateral heterojunction bipolar transistor (LHBT) and suitability, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral heterojunction bipolar transistor (LHBT) and suitability will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1557877