Lateral HEMT and method for the production of a lateral HEMT

Details Lateral HEMT and method for the production of a lateral HEMT Lateral HEMT and method for the production of a lateral HEMT

2011-08-16

2011-08-16

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S488000, C257SE29246

Reexamination Certificate

active

07999287

ABSTRACT:
In one embodiment a lateral HEMT has a first layer, the first layer including a semiconducting material, and a second layer, the second layer including a semiconducting material and being at least partially arranged on the first layer. The lateral HEMT further has a passivation layer and a drift region, the drift region including a lateral width wd. The lateral HEMT further has at least one field plate, the at least one field plate being arranged at least partially on the passivation layer in a region of the drift region and including a lateral width wf, wherein wf<wd.

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