Lateral hall element

Details Lateral hall element Lateral hall element

1996-03-29

1997-10-21

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

257423, 257427, 7351408, 7351431, 73DIG3, 3242072, H01L 2982, H01L 4300

Patent

active

056799730

ABSTRACT:
A lateral Hall element includes a substrate, a first-conductivity type active layer formed on the substrate, a first second-conductivity type semiconductor layer formed to surround the first-conductivity type active layer and formed to a depth to reach the substrate, a pair of first first-conductivity type semiconductor layers of high impurity concentration selectively formed with a preset distance apart from each other on the surface of the first-conductivity type active layer, current supply electrodes respectively formed on the pair of first first-conductivity type semiconductor layers, a pair of second first-conductivity type semiconductor layers of high impurity concentration formed with a preset distance apart from each other on the surface of the first-conductivity type active layer in position different from the first first-conductivity type semiconductor layers, sensor electrodes respectively formed on the pair of second first-conductivity type semiconductor layers, and a plurality of second second-conductivity type semiconductor layers formed on the surface of the first-conductivity type active layer in position different from the first and second first-conductivity type semiconductor layers.

REFERENCES:
patent: 4782375 (1988-11-01), Popovic
patent: 4829352 (1989-05-01), Popovic et al.
patent: 4939563 (1990-07-01), Fang et al.
patent: 4987467 (1991-01-01), Popovic
patent: 5099298 (1992-03-01), Nakamura et al.
patent: 5179429 (1993-01-01), Ristic
patent: 5323050 (1994-06-01), Ristic
patent: 5530345 (1996-06-01), Murari et al.

Affiliated with

Also associated with

Rating

Lateral hall element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral hall element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral hall element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1009014