Lateral gate, vertical drift region transistor

Details Lateral gate, vertical drift region transistor Lateral gate, vertical drift region transistor

1998-08-19

2000-11-14

Elms, Richard T.

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having structure increasing breakdown voltage

438173, 438268, 438273, 438283, H01L 21332, H01L 21336

Patent

active

061469262

ABSTRACT:
A lateral gate, vertical drift region transistor including a drain positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. A source positioned on the doped structure in communication with the doped region and an implant region positioned in the doped region adjacent the surface and in communication with the source and buried region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define an inversion region in the implant region extending laterally adjacent the control terminal and communicating with the drift region and the source.

REFERENCES:
patent: 5338945 (1994-08-01), Baliga et al.
patent: 5396087 (1995-03-01), Baliga
patent: 5877047 (1999-03-01), Weitzel
patent: 5895939 (1999-04-01), Ueno
patent: 5912497 (1999-06-01), Baliga
patent: 5963807 (1999-10-01), Ueno

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