Lateral gate, vertical drift region transistor

Details Lateral gate, vertical drift region transistor Lateral gate, vertical drift region transistor

1996-07-29

1998-07-14

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257133, 257147, 257212, 257342, 257 77, 257329, H01L 2976

Patent

active

057808783

ABSTRACT:
A lateral gate, vertical drift region transistor including a drain positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. A source positioned on the doped structure in communication with the doped region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define an accumulation region extending laterally adjacent the control terminal and communicating with the drift region and the source.

REFERENCES:
patent: 5077589 (1991-12-01), Holm et al.
patent: 5338945 (1994-08-01), Baliga et al.
patent: 5396087 (1995-03-01), Baliga

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