Lateral gate vertical drift region transistor

Details Lateral gate vertical drift region transistor Lateral gate vertical drift region transistor

1997-03-31

1999-06-29

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257133, 257147, 257212, 257342, 257 77, 257329, H02L 2976

Patent

active

059172037

ABSTRACT:
A lateral gate, vertical drift region transistor including a drain positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. A source positioned on the doped structure in communication with the doped region and an implant region positioned in the doped region adjacent the surface and in communication with the source and buried region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define an inversion region in the implant region extending laterally adjacent the control terminal and communicating with the drift region and the source.

REFERENCES:
patent: 5338945 (1994-08-01), Baliga et al.
patent: 5396087 (1995-03-01), Baliga

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