Lateral flux capacitor having fractal-shaped perimeters

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257534, 438393, H01L 2941

Patent

active

060842857

ABSTRACT:
Linear integrated circuit capacitors having greater capacitance per unit area by using lateral flux. One embodiment comprises a two metal layer capacitor wherein each metal layer is comprised of two capacitor conductive components. The capacitor conductive components are cross-coupled so that the total capacitance is the sum of the vertical flux between the metal layers, and the lateral flux along the edges between the two capacitor conductive components in each of the metal layers. The lateral flux between the capacitor conductive components in a single metal layer increases the capacitance per unit area and decreases the bottom-plate parasitic capacitance. Increasing the length of the common edge formed by capacitor conductive components in a metal layer increases the capacitance per unit area. In one lateral flux capacitor, each metal layer is comprised of a plurality of rows, alternate rows are coupled together such that lateral flux is generated between each of the rows. The rows are also cross-coupled with rows in adjacent metal layers to provide vertical flux. Fractal shapes can be used to maximize the length of the perimeter of adjacent capacitor conductive components in a single metal layer. The Koch Islands and Minkowski Sausage families of fractals are particularly well suited for generating capacitor conductive component perimeter shapes. These fractals are generated by selecting an initiator shape and repeatedly applying a generator. The fractal shapes are generated by a computer program based upon user input parameters.

REFERENCES:
patent: 5444600 (1995-08-01), Dobkin et al.
patent: 5447067 (1995-09-01), Biebl et al.
patent: 5589709 (1996-12-01), Dobkin et al.
patent: 5777532 (1998-07-01), Lakin
patent: 5828106 (1998-10-01), Sato
IBM Technical Disclosure Bulletin, vol. 33, No. 10A, Mar. 1991, p. 424, "Decoupling Capacitor Incorporated in Printed Circuit Board."

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