Lateral field FBAR

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

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Details

310322, 310358, 310365, 310366, H01L 4108

Patent

active

052332594

ABSTRACT:
This invention is a design for lateral field film bulk acoustic resonators (LF-FBAR). All electrodes in this design are located on one surface of the piezoelectric material, thereby simplifying manufacturing and improving performance. The gap between electrodes is limited to a specified dimension to maximize the efficiency of the device. Single and multi-pole devices are described. Barium magnesium fluoride and lithium niobate are specified as the piezoelectric material for high frequency applications.

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