Lateral field emission devices

Electric lamp and discharge devices – Discharge devices having a multipointed or serrated edge...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

313336, 313351, H01J 116, H01J 1924

Patent

active

052332632

ABSTRACT:
Lateral cathode field emission devices and methods of fabrication are set forth. Conventional integrated circuit fabrication techniques are advantageously used to produce the lateral FEDs. Cathode tips on the order of several hundred angstroms are consistently obtained as well as exact spacing of the cathode to gate and cathode to anode. Various cathode and device configurations are described, including a circular field emission device. A single integrated structure having multiple cathodes and multiple gates is possible to perform various logic operations and/or enhance current output from the device. Multiple field effect devices, with cathodes disposed parallel or perpendicular to the substrate, are integrally coupled through a sharing of one or more metallization layers definitive of the elements of the devices. Significant advantages in current density and circuit layout can be obtained. Methods for fabricating the various devices are also explained.

REFERENCES:
patent: 3982147 (1976-09-01), Redman
patent: 4721885 (1988-01-01), Brodie
patent: 4728851 (1988-03-01), Lambe
patent: 4827177 (1989-05-01), Lee et al.
patent: 4990766 (1991-02-01), Simms et al.
Cronin et al., "Field-Emission Triode Integrated-Circuit Construction Method," IBM Technical Disclosure Bulletin, vol. 32 No. 5B, pp. 242-243, 1989.
Cronin, J. E., "Process Method for Making a Sharp Tip," Reproduced from Research Disclosure, No. 311, 1990.
Greene et al., "Vacuum Integrated Circuits," IEDM Technical Digest, 1985.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Lateral field emission devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral field emission devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral field emission devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2273546

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.