Lateral field effect transistor of SiC, a method for production

Details Lateral field effect transistor of SiC, a method for production Lateral field effect transistor of SiC, a method for production

1999-02-08

2000-10-03

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257343, 438270, 438931, H01L 310312, H01L 21335

Patent

active

061276952

ABSTRACT:
A lateral field effect transistor of SiC for high switching frequencies comprises a source region layer (5) and a drain region layer (6) laterally spaced and highly doped n-type, an n-type channel layer (4) extending laterally and interconnecting the source region layer and the drain region layer for conducting a current between these layers in the on-state of the transistor, and a gate electrode (9) arranged to control the channel layer to be conducting or blocking through varying the potential applied to the gate electrode. A highly doped p-type base layer (12) is arranged next to the channel layer at least partially overlapping the gate electrode and being at a lateral distance to the drain region layer. The base layer is shorted to the source region layer.

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