Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1986-11-17
1988-11-22
Clawson, Jr., Joseph E.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 22, 357 43, 357 59, 307633, H01L 2974
Patent
active
047869585
ABSTRACT:
A semiconductor power device with bipolar regenerative switching characteristics provides insulated gate structures for controlling device turn-on and turn-off. Rapid turn-off is achieved in part by a lateral field effect pinch resistance and a vertical field effect pinch resistance produced by an electrically floating structure. The device is electrically isolated by layer of dielectric which allows it to be easily integrated with other circuit elements. The device can be controlled by low current and low positive voltages which provide for simpler interfacing and better electrical compatibility with other circuits in an automotive system. A method of manufacturing this device is also provided.
REFERENCES:
patent: 3891866 (1975-06-01), Okuhara et al.
patent: 4199774 (1980-04-01), Plummer
patent: 4604638 (1986-08-01), Matsuda
patent: 4605872 (1986-08-01), Rung
patent: 4654691 (1987-03-01), Shirasawa et al.
J. Plummer et al., "Insulated Gate Thyristors . . . ", I, & II, pp. 380-393, IEEE Trans. On Elec. Dev., vol. Ed-27 #2, Feb. 1980.
J. Tihanyi, "Funct. Integ. of Power MOS & Bipolar Devs.", 1980 IEDM Conf. Proc., CH1616-2, pp. 75-78.
Clawson Jr. Joseph E.
General Motors Corporation
Wallace R. J.
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