Lateral double diffused insulated gate field effect transistor f

Details Lateral double diffused insulated gate field effect transistor f Lateral double diffused insulated gate field effect transistor f

1991-12-30

1994-04-26

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437 69, 437 70, 148DIG96, H01L 21336

Patent

active

053066529

ABSTRACT:
A transistor (10) has a thin epitaxial layer (14) of a second conductivity type on a semiconductor substrate (12) of a first conductivity type. A drift region (24) of the second conductivity type is formed extending through the thin epitaxial layer (14) to the substrate (12) . A thick insulator layer (26) is formed on the drift region (24). An IGFET body (28) of the first conductivity type is formed adjacent the drift region (24). A source region (34) of the second conductivity type is formed within the IGFET body (28) and spaced from the drift region (24) defining a channel region (40) within the IGFET body (28). A conductive gate (32) is insulatively disposed over the IGFET body (28) and extends from the source region (34) to the thick insulator layer (26). A drain region (36) is formed adjacent the drift region (24).

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Parpia, Z., et al., "Optimization of Resurf LDMOS . . . ", IEEE Trans. Electron Devices, vol. 37, No. 3, Mar. 1990, pp. 789-795.

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