Lateral DMOS transistor and method for the production thereof

Details Lateral DMOS transistor and method for the production thereof Lateral DMOS transistor and method for the production thereof

2011-07-05

2011-07-05

Sandvik, Benjamin P (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

C257S141000, C257S343000, C257SE21414, C257SE21424, C257SE21435, C257SE29120, C257SE29261, C438S297000

Reexamination Certificate

active

07973333

ABSTRACT:
A lateral DMOS-transistor is provided that includes a MOS-diode made of a semi-conductor material of a first type of conductivity, a source-area of a second type of conductivity and a drain-area of a second type of conductivity which is separated from the MOS-diode by a drift region made of a semi-conductor material of a second type of conductivity which is at least partially covered by a dielectric gate layer which also covers the semi-conductor material of the MOS-diode. The dielectric gate-layer comprises a first region of a first thickness and a second region of a second thickness. The first region covers the semi-conductor material of the MOS-diode and the second region is arranged on the drift region. A transition takes place from the first thickness to the second thickness such that an edge area of the drift region which is oriented towards the MOS-diode is arranged below the second area of the gate layer. The invention also relates to a method for the production of these types of DMOS-transistors.

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Vandooren et al., “Back-Gate and Series Resistance Effects in LDMOSFETs on SOI”, IEEE Transactions on Electron Devices, vol. 48, No. 9, Sep. 2001, pp. 2410-2416.

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