Radiation imagery chemistry: process – composition – or product th – Imaged product – Structurally defined
Patent
1997-02-20
1998-12-29
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaged product
Structurally defined
430313, 430 30, G03F 700
Patent
active
058539255
ABSTRACT:
A diffusion confirming pattern for measuring a diffusion distance of an etch-resistant component during a transfer process of a semiconductor device, includes a first photoresist pattern formed on a substrate according to a first mask pattern, and a second photoresist pattern formed on the substrate according to a second mask pattern, wherein the first mask pattern is separated from the second mask pattern by a predetermined interval, the second photoresist pattern is separated from the first photoresist pattern by an interval, and the predetermined interval is compared with the interval between the first and second photoresist patterns to determine the diffusion distance of the etch-resistant component.
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Promximity effects in dry developed lithograph for sub-0.35 um application, A.M. Goethals et al, IMEC, Kapeldreef 75, 3001 Leuven, Belgium, 349/SPIE vol. 2195, pp. 394-406.
Duda Kathleen
LG Semicon Co. Ltd.
VanderWilt John
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