Lateral device structures using self-aligned fabrication techniq

Details Lateral device structures using self-aligned fabrication techniq Lateral device structures using self-aligned fabrication techniq

1986-03-19

1987-08-18

Edlow, Martin H.

357 35, 357 40, 357 59, 357 44, 357 51, 357 15, H01L 2908, H01L 2972, H01L 2991, H01L 2704

Patent

active

046880739

ABSTRACT:
Submicron lateral device structures, such as bipolar transistors, Schottky Barrier diodes and resistors, are made using self-aligned fabrication techniques and conventional photolithography. The devices are made using individual submicron silicon protrusions which extend outwardly from and are integral with a silicon pedestal therefor. Both PNP and NPN transistors may be made by diffusing approximate dopant materials into opposing vertical walls of a protrusion so as to form the emitter and collector regions. The protrusions themselves are formed by anisotropically etching the silicon using submicron insulating studs as a mask. The studs are formed using sidewall technology where a vertical sidewall section of a layer of insulating material is residual to a reactive ion etching process employed to remove the layer of insulating material.

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IBM Technical Disclosure Bulletin, vol. 20, No. 4, Sep. 1977, "Extending the Minimal Dimensions of Photolitohgraphic Integrated-Circuit Fabrication Processing" by S. A. Abbas et al.

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