Lateral device structures using self-aligned fabrication techniq

Details Lateral device structures using self-aligned fabrication techniq Lateral device structures using self-aligned fabrication techniq

1981-03-30

1985-04-02

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, 29580, 148187, 156657, 156662, H01L 2120, H01L 2128

Patent

active

045085790

ABSTRACT:
Submicron lateral device structures, such as bipolar transistors, Schottky Barrier diodes and resistors, are made using self-aligned fabrication techniques and conventional photolithography. The devices are made using individual submicron silicon protrusions which extend outwardly from and are integral with a silicon pedestal therefor. Both PNP and NPN transistors may be made by diffusing appropriate dopant material into opposing vertical walls of a protrusion so as to form the emitter and collector regions. The protrusions themselves are formed by anisotropically etching the silicon using submicron insulating studs as a mask. The studs are formed using sidewall technology where a vertical sidewall section of a layer of insulating material is residual to a reactive ion etching process employed to remove the layer of insulating material.

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IBM TDB, vol. 19, No. 12, May 1977, "Method for Reducing the Emitter-Base Contact Distance in Bipolar Transistors", C. G. Jambotkar, pp. 4601-4604.
IBM TDB, vol. 21, No. 12, May 1979, "Stacking Poly-Silicon Devices for High Density LSI", I. T. Ho et al., pp. 4843-4844.

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