Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-09-14
2009-06-09
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S090000, C257S091000, C257S095000, C257S098000, C438S046000, C438S047000
Reexamination Certificate
active
07544971
ABSTRACT:
A lateral current blocking light-emitting diode and a method for manufacturing the same are disclosed. The light-emitting diode comprises an insulating substrate, a semiconductor epitaxial structure and electrodes of different conductivity types. The semiconductor epitaxial structure has at least one trench and comprises a first conductivity type semiconductor layer deposed on a portion of the insulating substrate, in which a bottom of the trench is beneath the first conductivity type semiconductor layer, an active layer located on a portion of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer deposed on the active layer. A first conductivity type electrode is deposed on the exposed portion of the first conductivity type semiconductor layer, and a second conductivity type electrode is deposed on a portion of the second conductivity type semiconductor layer, in which the trench covers the shortest conductive path between the first conductivity type electrode and the second conductivity type electrode, so as to block the current between the first conductivity type electrode and the second conductivity type electrode from flowing through the shortest conductive path.
REFERENCES:
patent: 5612231 (1997-03-01), Holm et al.
patent: 6445007 (2002-09-01), Wu et al.
patent: 2005/0156189 (2005-07-01), Deguchi et al.
Epistar Corporation
Hsu Winston
Pham Long
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