Lateral conduction Schottky diode with plural mesas

Details Lateral conduction Schottky diode with plural mesas Lateral conduction Schottky diode with plural mesas

2006-08-01

2006-08-01

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S280000, C257S485000, C257S281000, C438S167000, C438S092000, C438S173000

Reexamination Certificate

active

07084475

ABSTRACT:
A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the forward resistance of a device. The multiple mesas may be isolated from one another and have sizes and shapes optimized for reducing the forward resistance. Alternatively, some of the mesas may be finger-shaped and intersect with a central mesa or a bridge mesa, and some or all of the ohmic contacts are interdigitated with the finger-shaped mesas. The dimensions of the finger-shaped mesas and the perimeter of the intersecting structure may be optimized to reduce the forward resistance. The Schottky diodes may be mounted to a submount in a flip chip arrangement that further reduces the forward voltage as well as improves power dissertation and reduces heat generation.

REFERENCES:
patent: 3775200 (1973-11-01), de Nobel et al.
patent: 4745445 (1988-05-01), Mun et al.
patent: 5602418 (1997-02-01), Imai et al.
patent: 5877558 (1999-03-01), Nakamura et al.
patent: 6184570 (2001-02-01), MacDonald, Jr. et al.
patent: 6331450 (2001-12-01), Uemura
patent: 6344665 (2002-02-01), Sung et al.
patent: 6380108 (2002-04-01), Linthicum et al.
patent: 6437374 (2002-08-01), Northrup et al.
patent: 6507041 (2003-01-01), Nakamura et al.
patent: 6524900 (2003-02-01), Dahlqvist et al.
patent: 6573537 (2003-06-01), Steigerwald et al.
patent: 6586777 (2003-07-01), Yuasa et al.
patent: 6586781 (2003-07-01), Wu et al.
patent: 6593597 (2003-07-01), Sheu
patent: 6605854 (2003-08-01), Nagase et al.
patent: 6608327 (2003-08-01), Davis et al.
patent: 6610995 (2003-08-01), Nakamura et al.
patent: 6624444 (2003-09-01), Li
patent: 6627967 (2003-09-01), Asano et al.
patent: 2001/0034116 (2001-10-01), Lee et al.
patent: 2003/0015708 (2003-01-01), Parikh et al.
patent: 2003/0062525 (2003-04-01), Parikh et al.
patent: 2003/0075728 (2003-04-01), Tooi et al.
patent: 2005/0127465 (2005-06-01), Chiola
Yanagihara, et al., “Development of GaN-Based Electronic Device on Si”, Sanken Technical Report, vol. 35, No. 1 (2003), pp. 11-14, Japan (English—language translation of Japanese—language publication).

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