Lateral channel transistor

Details Lateral channel transistor Lateral channel transistor

2006-04-11

2006-04-11

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S076000, C257S077000, C257S287000, C257S492000, C257S493000, C257S615000, C257S622000

Reexamination Certificate

active

07026669

ABSTRACT:
A lateral channel transistor with an optimal conducting channel formed in widebandgap semiconductors like Silicon Carbide and Diamond is provided. Contrary to conventional vertical design of power transistors, a higher, optimum doping for a given thickness supports higher source/drain blocking voltage. A backside gate is insulated from the channel region using a low doped layer of the opposite conductivity type than the channel region to support the rated blocking voltage of the device.

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