Lateral bipolar transistor with insulating trenches

Details Lateral bipolar transistor with insulating trenches Lateral bipolar transistor with insulating trenches

1992-04-07

1994-06-21

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With emitter region having specified doping concentration...

257592, 257593, 257756, H01L 27082, H01L 27102, H01L 3111, H01L 2348

Patent

active

053230574

ABSTRACT:
A lateral bipolar transistor and method of making which is compatible with making BICMOS circuits are disclosed. The method includes: Forming on a substrate of one conductivity type at least one layer of a semiconductor material of opposite conductivity type. Forming a first region of opposite conductivity type into one portion of the layer and a highly conductive contact region to the layer in another portion, forming a layer of an insulating material over the layer and providing an aperture therethrough to the first region. Depositing a layer of polycrystalline silicon over the insulating layer and in the aperture so that it is in the aperture and extends a short distance beyond the aperture but not beyond the edge of the first region. Ion implanting a dopant of the opposite conductivity type into the polycrystalline silicon and into the portion of the first region which extends beyond the edge of the polycrystalline to form a second region of opposite conductivity type in the layer and around the first region. Annealing the substrate to drive the dopant from the conductive layer into the first region to form a third region of opposite conductivity type.

REFERENCES:
patent: 5083180 (1992-01-01), Miura et al.

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