Lateral bipolar transistor with a particular collector structure

Details Lateral bipolar transistor with a particular collector structure Lateral bipolar transistor with a particular collector structure

1992-06-18

1994-09-13

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257557, 257556, 257552, H01L 2970, H01L 2973

Patent

active

053471563

ABSTRACT:
A lateral transistor includes a semiconductor substrate, a buried layer formed on the semiconductor substrate, an epitaxial layer formed on the buried layer in such a manner that the epitaxial layer is a p-type or n-type (first conductivity-type), a diffusion zone having a second conductivity-type opposite to the first conductivity-type and including an emitter zone and collector zone formed on the epitaxial layer, and a base zone. The base zone includes an epitaxial layer interposed between the emitter zone and the collector zone. The collector zone is formed within a well zone in such a manner that the well zone has the same type conductivity as the collector zone and a lower concentration than the collector zone.

REFERENCES:
patent: 4804634 (1989-02-01), Krishna et al.
patent: 5081517 (1992-01-01), Contiero et al.

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