Lateral bipolar transistor operating with independent base and g

Details Lateral bipolar transistor operating with independent base and g Lateral bipolar transistor operating with independent base and g

1993-06-01

1999-08-10

Tran, Toan

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327434, H03K 1760

Patent

active

059364548

ABSTRACT:
A laterally formed bipolar transistor receives independent base biasing at a base terminal and gate biasing at a gate terminal for providing high forward current gain and improved frequency response. The collector and emitter are formed with a first conductivity type and disposed in a well having a second conductivity type. The gate of the lateral transistor is formed adjacent to the well between the collector and emitter and receives the gate bias. The base of the lateral transistor is formed adjacent to the well and receiving the base bias. The combination of independent base and gate biasing provides more mobile carries to improve the forward current gain and frequency response of the lateral transistor while reducing its overall area.

REFERENCES:
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patent: 4872042 (1989-10-01), Maeda et al.
patent: 4901127 (1990-02-01), Chow et al.
patent: 5091664 (1992-02-01), Furuhata
patent: 5237211 (1993-08-01), Tanaka et al.

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