Lateral bipolar transistor having buried base contact

Details Lateral bipolar transistor having buried base contact Lateral bipolar transistor having buried base contact

1995-10-23

1996-12-03

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257518, 257563, 257587, 257370, H01L 2702, H01L 29735

Patent

active

055811124

ABSTRACT:
A lateral bipolar transistor comprising a self-aligned polysilicon base contact, and polysilicon emitter and collector contacts is provided. The self-aligned base contact significantly reduces the base width and therefore the base resistance compared with conventional lateral bipolar transistors, thus improving f.sub.t and f.sub.max. The polysilicon emitter and collector contacts improve the emitter efficiency and current gain, and allows for more flexible contact placement. The process is compatible with conventional double-poly bipolar processes.

REFERENCES:
patent: 5081517 (1992-01-01), Contiero et al.
patent: 5397912 (1995-03-01), Sundaram

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