Lateral bipolar transistor for logic circuit

Details Lateral bipolar transistor for logic circuit Lateral bipolar transistor for logic circuit

1989-03-23

1990-01-30

Mintel, William

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 46, 357 92, 357 34, 357 15, 357 40, 307454, 307456, H01L 2972

Patent

active

048977055

ABSTRACT:
A semiconductor integrated circuit device comprises a lateral pnp transistor having a base to which an input signal is applied and a first npn transistor having a base to which a potential appearing at the emitter of the pnp transistor is applied, which transistors constitute a bipolar logic circuit. In the circuit device, the width of the base of the pnp transistor is determined to be in the range of from 5 .mu.m to 7 .mu.m.

REFERENCES:
patent: 4433258 (1984-02-01), Kaneko et al.
Guide Book of Ultra LSIs, vol. 4, Bipolar Integrated Circuits published by Kindai Kagakusha on Dec. 1, 1984, p. 21.

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