Lateral bipolar transistor and method of production

Details Lateral bipolar transistor and method of production Lateral bipolar transistor and method of production

2007-05-23

2010-12-28

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

C257S556000, C257S560000, C257S575000, C257SE29031, C257S561000, C257S563000, C257S564000, C257SE29032

Reexamination Certificate

active

07859082

ABSTRACT:
Emitter and collector regions of the bipolar transistor are formed by doped regions of the same type of conductivity, which are separated by doped semiconductor material of an opposite type of conductivity, the separate doped regions being arranged at a surface of a semiconductor body and being in electric contact with electrically conductive material that is introduced into trenches at the surface of the semiconductor body.

REFERENCES:
patent: 4075039 (1978-02-01), Sloan, Jr.
patent: 4704786 (1987-11-01), Kub
patent: 6469366 (2002-10-01), Nakashima et al.
patent: 6566733 (2003-05-01), Husher et al.
patent: 7164190 (2007-01-01), Kobashi et al.
patent: 2002/0030244 (2002-03-01), Pruijmboom et al.
patent: 2005/0056906 (2005-03-01), Jimbo et al.
patent: 0657942 (1995-06-01), None
patent: 0035018 (2000-06-01), None

Affiliated with

Also associated with

Rating

Lateral bipolar transistor and method of production does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral bipolar transistor and method of production, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral bipolar transistor and method of production will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4153277