Lateral bipolar transistor and method of producing the same

Details Lateral bipolar transistor and method of producing the same Lateral bipolar transistor and method of producing the same

1993-09-27

1994-12-27

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257584, H01L 2972

Patent

active

053768230

ABSTRACT:
A lateral bipolar transistor includes an insulating substrate, a single crystal semiconductor layer having a first conductivity, a mask layer which has a substantially vertical side surface and which is in contact with the single crystal semiconductor layer, and an insulating sidewall formed along the side surface of the mask layer. A base region is located under the insulating sidewall and formed in the single crystal semiconductor layer. The base region has a second conductivity opposite to the first conductivity and contains an impurity implanted by an ion implantation process. The single crystal semiconductor layer has an underlying portion on which the mask layer and the insulating sidewall are formed. An emitter region is formed in a first portion of the single crystal semiconductor layer other than the underlying portion. A collector region is formed in a second portion of the single crystal semiconductor layer other than the underlying portion.

REFERENCES:
patent: 4658282 (1987-04-01), Matzen, Jr.
patent: 4710241 (1987-12-01), Komatsu
patent: 5028973 (1991-07-01), Bajor
Sturm et al., "A lateral silicon-on-insulator bipolar transistor with a self-aligned base contact", IEEE Electron Device Letters, vol. EDL-8, No. 3, pp. 104-106, Mar. 1987.
Tamba et al., "A Novel CMOS-Compatible Lateral Bipolar Transistor for High-Speed BICMOS LSI", IEDM 90, 395-398, 1990.

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