Lateral bipolar transistor and method of making the same

Details Lateral bipolar transistor and method of making the same Lateral bipolar transistor and method of making the same

1991-07-19

1993-02-16

Quach, T. N.

Fishing, trapping, and vermin destroying

437162, 148DIG96, H01L 21328

Patent

active

051871092

ABSTRACT:
A lateral bipolar transistor and method of making the transistor which is compatible with a method of making MOS transistors to be used in making BICMOS circuits are disclosed. The method includes the following steps: Forming on the surface of a substrate of one conductivity type at least one layer of a semiconductor material of the opposite conductivity type. Forming a first region of the opposite conductivity type into one portion of the layer in one of the portions of the layer and a highly conductive contact region to the layer in another portion, forming a layer of an insulating material over the layer and providing an aperture therethrough to the first region. Depositing a layer of polycrystalline silicon over the insulating layer and in the aperture and defining the polycrystalline silicon layer so that it is in the aperture and extends a short distance beyond the aperture but not beyond the edge of the first region. Ion implanting a dopant of the opposite conductivity type into the defined portion of the polycrystalline silicon and into the portion of the first region which extends beyond the edge of the polycrystalline region to form a second region of the opposite conductivity type in the layer and around the first region. Annealing the substrate to drive the dopant from the conductive layer into the first region to form a third region of the opposite conductivity type in the first region and spaced from the third region.

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Article by S. P. Gaur et al., entitled "Optimum Lateral PNP Transistor", published in the IBM Technical Disclosure Bulletin, vol. 26, No. 9, Feb., 1984, pp. 4584 and 4585.
Article by S. P. Gaur et al., entitled "Enclosed Lateral PNP Transistor", published in the IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug., 1986, pp. 1029 and 1030.

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