Lateral bipolar transistor and FET compatible process for making

Details Lateral bipolar transistor and FET compatible process for making Lateral bipolar transistor and FET compatible process for making

1994-12-14

1995-09-12

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 32, 437 34, 437162, 437 59, 148DIG9, H01L 218248

Patent

active

054496276

ABSTRACT:
A lateral bipolar transistor and method of making the transistor are disclosed. The device is made by etching a trench around a central region of a semiconductor body. An emitter is buried beneath the surface of this central area and contact to it is made via a self-alignment technique. The collector region of the transistor is contacted through the floor of the trench while the base region of the transistor is contacted in a region that surrounds the trench. The described method is compatible with the simultaneous manufacture of FET devices on the same chip.

REFERENCES:
patent: 4743565 (1988-05-01), Goth et al.
patent: 4778774 (1988-10-01), Blossfeld
patent: 4868135 (1989-09-01), Ogura et al.
patent: 5006476 (1991-04-01), De Jong et al.
patent: 5075241 (1991-12-01), Spratt et al.
patent: 5079182 (1992-01-01), Ilderem et al.
patent: 5187109 (1993-02-01), Cook et al.
patent: 5389553 (1995-02-01), Grubisich et al.

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